USE OF NEUTRON-DOPED SILICON DIODES IN RECTIFIERS OF RAILROAD SUBSTATIONS

EINSATZ VON NEUTRONENDOTIERTEN SILICIUMDIODEN IN GLEICHRICHTERN VON BAHNUNTERWERKEN

By means of a particular doping technique it is possible to produce high-power diodes for reverse voltages up to 4,800 v. It is shown how these have made it possible to design rectifiers for railroad substations also for high operational voltages without connecting the diodes in series. By means of a favorable shape of the cooling body, a compact structure and a particular arrangement of the busbars a high loading rate is obtained even with non-forced air cooling.

  • Corporate Authors:

    Verlag R Oldenbourg

    Rosenheimer Strasse 145
    Munich 80,   Germany 
  • Authors:
    • LEHMANN, G
    • Rausch, D
    • Zellerhoff, H G
  • Publication Date: 1978-8

Language

  • German

Media Info

  • Features: References;
  • Pagination: p. 195-197
  • Serial:

Subject/Index Terms

Filing Info

  • Accession Number: 00182801
  • Record Type: Publication
  • Source Agency: Engineering Index
  • Files: TRIS
  • Created Date: Oct 31 1978 12:00AM