This report covers the progress made on high frequency power rectification from September 1966 to September 1967. The requirements for a high frequency rectifying diode are reviewed. The germanium-gallium arsenide p-n heterojunction diode is presented and its material requirements, fabrication technology, and packaging are discussed. The circuit requirements for high frequency rectification are considered, and a new lumped circuit test jig was designed and built. The development of a 220 MHz one kilowatt rectification test facility is reported. Finally, a continuous rectified DC output power of 28 watts was obtained from a 220 MHz source using a single germanium-gallium arsenide heterojunction diode. The overall rectification efficiency of a similar heterojunction diode including circuit losses was 72%. (Author)

  • Supplemental Notes:
    • Report on Project Tubeflight. See also PB-179 464.
  • Corporate Authors:

    Rensselaer Polytechnic Institute

    Division of Electrophysics
    Troy, NY  United States  12180
  • Authors:
    • Mortenson, K E
    • Bakeman, PEJ
    • Taft, W C
  • Publication Date: 1967-12

Media Info

  • Pagination: 42 p.

Subject/Index Terms

Filing Info

  • Accession Number: 00039105
  • Record Type: Publication
  • Source Agency: National Technical Information Service
  • Report/Paper Numbers: TR-EP-6803
  • Contract Numbers: C-117-66
  • Files: TRIS
  • Created Date: Nov 24 1973 12:00AM