Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed.

  • Supplemental Notes:
    • Sponsored by Department of Energy, Washington, DC.
  • Corporate Authors:

    Sandia National Laboratories

    P.O. Box 5800
    Albuquerque, NM  United States  87185

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  • Authors:
    • Ringland, J T
  • Publication Date: 1994-3


  • English

Media Info

  • Pagination: 41 p.

Subject/Index Terms

Filing Info

  • Accession Number: 00672193
  • Record Type: Publication
  • Report/Paper Numbers: SAND-94-8226
  • Files: TRIS, USDOT
  • Created Date: Jan 5 1995 12:00AM