SIMULATION AND CHARACTERIZATION OF GATE-TURN-OFF THYRISTORS

LA COOPERATION LAAS-INRETS DANS LE DOMAINE DES THYRISTORS GTO

The gate-turn-off (GTO) thyristors can act as switches controlling the turn-on and turn-off, like transistors, while maintaining the performance in off state voltage and on state current characterizing semi-conductivity structures with four PNPN films. The principle on which they are based have been understood for some time, but these power electonics components have been industrialized only recently (after much developmental work, mainly in Japan) for the needs of railway traction. Gate-turn-of thyristors are an important innovation of the last decade in the field of semiconductor high-power components, and the technology is still undergoing development.

  • Availability:
  • Corporate Authors:

    Institut National de Recherche sur les Transports et leur Securite (INRETS)

    2 Avenue du General Malleret-Joinville
    Arcueil Cedex,   France  F-94114
  • Authors:
    • PASCAL, J P
  • Publication Date: 1989-6

Language

  • French

Media Info

  • Features: Figures; References;
  • Pagination: p. 15-28
  • Serial:
    • RECHERCHE TRANSPORTS SECURITE
    • Issue Number: 22
    • Publisher: Institut National de Recherche sur les Transports et leur Securite (INRETS)
    • ISSN: 0761-8980

Subject/Index Terms

Filing Info

  • Accession Number: 00486823
  • Record Type: Publication
  • Files: TRIS
  • Created Date: Aug 31 1989 12:00AM