EVALUATION OF SEMI-CONDUCTOR DEVICES FOR ELECTRIC AND HYBRID VEHICLE (EHV) AC-DRIVE APPLICATIONS. VOLUME I

This volume describes the major tasks, test method and conclusions. Separate chapters deal with bipolar transistors. In Chapter 3, six sets of device parameters are evaluated: Switching time, power losses, static characteristics, reverse recovery of diodes, device paralleling etc. In Chapter 4, reverse-bias-second breakdown capabilities of power transistors are evaluated. A unique nondestructive second-breakdown tester, constructed and tested at Virginia Polytechnic Institute and State University (VPI and SU) was used to evaluate these devices. In Chapter 5, several base-drive circuit hardwares were evaluated, including a "smart" proportional current drive circuit developed at VPI and SU. The results of MOSFET evaluation are presented in Chapter 6, and ASCR results are presented in Chapter 7.

• Corporate Authors:

  Virginia Polytechnic Institute and State University, Blacksburg

  Department of Agronomy
  Blacksburg, VA  United States  24061
• Authors:
  • Lee, F C
  • Chen, D Y
  • Jovanovic, M
  • Hopkins, D C
• Publication Date: 1985-5-1

Media Info

• Pagination: 240 p.

Subject/Index Terms

• TRT Terms: Electric vehicles; Hybrid vehicles; Nondestructive tests; Semiconductors; Test procedures
• Subject Areas: Energy; Highways; Vehicles and Equipment; I91: Vehicle Design and Safety;

Filing Info

• Accession Number: 00453558
• Record Type: Publication
• Source Agency: Energy Research Abstracts
• Report/Paper Numbers: DOE/CS/54209-27VOL.1, JPL-9950-1038-VOL.1
• Contract Numbers: AI01-78CS54209
• Files: TRIS
• Created Date: Aug 27 2004 9:26PM