DISCRETE SOLID-STATE DEVICES

A fundamental knowledge of solid-state physics is used to gain understanding of the two basic active solid-state devices -- bipolar and field-effect transistors. The bipolar transistor is treated as two junctions communicating through a common region (the base). The functions of charge injection and collection are studied and developed to explain the observed static (d-c) volt-ampere characteristics. Major bipolar-transistor parameters are then reviewed. Finally, the limitations in gain, voltage, and power are discussed. There are basically two forms of field-effect transistors: the junction field effect transistor (JFET) and the metal oxide semiconductor (MOS). Both forms use a voltage applied to a gate electrode or region to control charge (current) flow between source and drain terminals. This action is studied and used to develop the observed state (d-c) volt-ampere characteristic. The major field-effect transistor parameters are then reviewed. Finally, the limitations in gain, voltage, and power are discussed.

  • Availability:
  • Supplemental Notes:
    • From: Automotive Electronics, SAE SP-388, 14-37, February 1974; SAE Paper No. 740010.
  • Corporate Authors:

    Society of Automotive Engineers

    485 Lexington Avenue
    New York, NY  United States  10017
  • Authors:
    • Olmstead, J A
  • Publication Date: 1974-2

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Subject/Index Terms

Filing Info

  • Accession Number: 00264207
  • Record Type: Publication
  • Report/Paper Numbers: SAE Paper No. 740010
  • Files: TRIS
  • Created Date: Dec 31 1974 12:00AM