DEVELOPMENT OF AN IMPROVED SEMICONDUCTOR PRESSURE SENSOR

The semiconductor pressure sensor has the advantages of high sensitivity, small size and high-speed response. However, one disadvantage is that the sensor output is greatly affected by temperature. The authors have attempted to improve the semiconductor pressure sensor by employing mechanical, electronic and material technologies. As a result, an improved pressure sensor has been developed which is applicable to automobiles. This paper describes the construction of the sensor unit, circuit design and evaluation results.

• Availability:
  • Find a library where document is available. Order URL: http://worldcat.org/oclc/6664983
• Corporate Authors:

  Society of Automotive Engineers of Japan

  10-2 Goban-cho, Chiyoda-ku
  Tokyo,   Japan 
• Authors:
  • Kobashi, M
  • Kawamura, T
  • Nakano, J
  • KAWASHIMA, Y
  • SUGIURA, J
• Publication Date: 1983-11

Media Info

• Features: Figures; References; Tables;
• Pagination: p. 60-65
• Serial:
  • JSAE Review
  • Issue Number: 12
  • Publisher: Society of Automotive Engineers of Japan
  • ISSN: 0389-4304
  • Serial URL: http://www.sciencedirect.com/science/journal/03894304

Subject/Index Terms

• TRT Terms: Design; Electronic control; Evaluation; Pressure gages; Semiconductors; Vehicle power plants
• Old TRIS Terms: Electronic engine control; Pressure sensors
• Subject Areas: Design; Safety and Human Factors; Vehicles and Equipment;

Filing Info

• Accession Number: 00389063
• Record Type: Publication
• Source Agency: National Highway Traffic Safety Administration
• Report/Paper Numbers: HS-036 583
• Files: HSL, USDOT
• Created Date: Sep 28 1984 12:00AM