AN EVALUATION OF SILICON ON SAPPHIRE TECHNOLOGY

Silicon on sapphire is a recent microelectronic circuit technology originally devised to eliminate the drawbacks of conventional junction isolation. It has since developed into a high performance MOS-type integrated circuit family. In this report a description of this logic family is given, including such topics as manufacturing processes, device physics, and performance of commercial circuits. The report concludes with an overall evaluation of this technology. (Author)

• Corporate Authors:

  Rome Air Development Center

  Griffiss AFB, NY  United States 
• Authors:
  • Domingos, H
  • Anderson, R
• Publication Date: 1976-3-1

Media Info

• Pagination: 152 p.

Subject/Index Terms

• TRT Terms: CMOS devices; Costs; Crystallization; Diagrams; Electric circuits; Electrical properties; Fabrication; Integrated circuits; Metals; Microelectronic materials; Oxides; Performance; Physical properties; Rock crystals; Semiconductor devices; Semiconductors; Silicon; Substrates (Waterways)
• Uncontrolled Terms: Substrates
• Old TRIS Terms: Circuits; Crystal growth; Epitaxial growth; Microelectronics; Performance engineering; Sapphire; Single crystals
• Subject Areas: Finance; Freight Transportation; Marine Transportation; Materials;

Filing Info

• Accession Number: 00136764
• Record Type: Publication
• Source Agency: National Technical Information Service
• Report/Paper Numbers: FAA-RD-76-62
• Contract Numbers: DOT-FA72WAI-356
• Files: NTIS
• Created Date: Jul 13 2002 12:00AM