A CMOS Optoelectronic IC Using a Monolithic Photodiodefor Wireline Networks
This paper describes a CMOS optoelectronic integrated circuit (OEIC) using a monolithic photodiode for automotive wireline networks. The OEIC integrates N-well/P-substrate photodiode, pre amplifier, post amplifier, and output driver. The N-well/P-substrate photodiode has 200-μm by 200-μm optical window, 0.1-A/W responsivity, 4-pF junction capacitance, 113-MHz bandwidth. The monolithic receiver can successfully convert 150-Mb/s optical signal into digital data through up to 30-m plastic optical fiber link. The receiver occupies 0.58-mm(2) area including electrostatic discharge protection diodes and bonding pads, and consumes 16 mA at 150-Mb/s data rate from a single 3.3V supply in active mode. To reduce power consumption, simple light detector and signal detector are introduced according to a power budget of the link, corresponding to only 132-μW sleep mode power consumption.
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Supplemental Notes:
- Abstract reprinted with permission from Intelligent Transportation Society of America.
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Corporate Authors:
1100 17th Street, NW, 12th Floor
Washington, DC United States 20036 -
Authors:
- Oh, Won-Seok
- Park, Kang-Yeob
- Park, Jong-Bum
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Conference:
- 19th ITS World Congress
- Location: Vienna , Austria
- Date: 2012-10-22 to 2012-10-26
- Publication Date: 2012
Language
- English
Media Info
- Media Type: Digital/other
- Features: CD-ROM; Figures; Photos; References; Tables;
- Pagination: 8p
- Monograph Title: 19th ITS World Congress, Vienna, Austria, 22 to 26 October 2012
Subject/Index Terms
- TRT Terms: Automobiles; Energy consumption; Integrated circuits; Monolithic catalysts; Photodetectors; Wireless communication systems
- Subject Areas: Data and Information Technology; Highways; Vehicles and Equipment; I91: Vehicle Design and Safety;
Filing Info
- Accession Number: 01499043
- Record Type: Publication
- Files: TRIS
- Created Date: Nov 21 2013 9:14AM