A CMOS Optoelectronic IC Using a Monolithic Photodiodefor Wireline Networks

This paper describes a CMOS optoelectronic integrated circuit (OEIC) using a monolithic photodiode for automotive wireline networks. The OEIC integrates N-well/P-substrate photodiode, pre amplifier, post amplifier, and output driver. The N-well/P-substrate photodiode has 200-μm by 200-μm optical window, 0.1-A/W responsivity, 4-pF junction capacitance, 113-MHz bandwidth. The monolithic receiver can successfully convert 150-Mb/s optical signal into digital data through up to 30-m plastic optical fiber link. The receiver occupies 0.58-mm(2) area including electrostatic discharge protection diodes and bonding pads, and consumes 16 mA at 150-Mb/s data rate from a single 3.3V supply in active mode. To reduce power consumption, simple light detector and signal detector are introduced according to a power budget of the link, corresponding to only 132-μW sleep mode power consumption.

  • Supplemental Notes:
    • Abstract reprinted with permission from Intelligent Transportation Society of America.
  • Corporate Authors:

    ITS America

    1100 17th Street, NW, 12th Floor
    Washington, DC  United States  20036
  • Authors:
    • Oh, Won-Seok
    • Park, Kang-Yeob
    • Park, Jong-Bum
  • Conference:
  • Publication Date: 2012

Language

  • English

Media Info

  • Media Type: Digital/other
  • Features: CD-ROM; Figures; Photos; References; Tables;
  • Pagination: 8p
  • Monograph Title: 19th ITS World Congress, Vienna, Austria, 22 to 26 October 2012

Subject/Index Terms

Filing Info

  • Accession Number: 01499043
  • Record Type: Publication
  • Files: TRIS
  • Created Date: Nov 21 2013 9:14AM