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    <managingEditor>tris-trb@nas.edu (Bill McLeod)</managingEditor>
    <webMaster>tris-trb@nas.edu (Bill McLeod)</webMaster>
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      <title>SENSORS AND ACTUATORS (1983) SP-536</title>
      <link>https://trid.trb.org/View/185575</link>
      <description><![CDATA[This report contains ten papers: (1) Smart Sensors, W.G. Wolber; (2) Sensor and Actuator Requirements for Heavy Duty Diesels, J.W. Austin; (3) Nonintrusive Acoustic System for the Dynamic Timing of Diesel Engines, R.C. Davis et al.; (4) A New Load Sensor for Truck Self Weighing Systems, J.D. Barnett, R. West; (5) Automotive Thick Film Temperature Sensors, B. Montaron; (6) An Advanced Electrothermal Sensor for Automotive Level Measurement, M. Haub et al.; (7) High Reliability Absolute Semiconductor Pressure Sensor, M. Bessho et al.; (8) Exhaust Gas Oxygen Sensors Based on TiO2 Films, W.J. Kaiser and E.M. Logothetis; (9) Sensors in Action for Quality Assurance, S.K. Smith and D.J. Rozsi; and (10) Analysis of Piezoelectric Benders Used As Knock Sensors, J.F. Guess.]]></description>
      <pubDate>Tue, 31 May 1983 00:00:00 GMT</pubDate>
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      <title>HIGH RELIABILITY ABSOLUTE SEMICONDUCTOR PRESSURE SENSOR</title>
      <link>https://trid.trb.org/View/189668</link>
      <description><![CDATA[This paper describes an absolute semiconductor pressure sensor suitable for the engine control systems in automobiles. Using the passive (electrically nonconnected) side of a sensor chip as the pressure interface, it has good pressure media compatibility. But it requires a pedestal with a pressure inlet hole and a larger contact area for good sealed, vacuum reference, since the larger contact area causes a larger temperature shift of the offset voltage due to thermal stress. We have analyzed the thermal stress by the finite element method and have designed a lower, tubular pedestal with a groove which has isolated the sensor chip from the thermal stress more effectively. As a result, the sensor chip has been assembled in a standard TO-5 package and a temperature shift of the offset voltage within plus or minus 1% error of FS (Full Scale) without temperature compensation in the temperature range of minus 30 deg C to 100 deg C has been realized.]]></description>
      <pubDate>Tue, 31 May 1983 00:00:00 GMT</pubDate>
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